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Bauteile und komplettierende Erzeugnisse der Elektronik
- Feldtransistor 2P202D-1
Single naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - Feldtransistor 2P202D1N
Single naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - Feldtransistor 2P202E-1
Single naked siliceous ýïèòàêñèàëüíîïëàíàðíûé with p-n ïåðåõî
house and n-channel, low-noise. For hybrid integrated circuits - Feldtransistor 2P202E-1 (i-l)
Single naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - Feldtransistor 2P202E1N
Single naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - Feldtransistor 2PS104A
Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and
n-channel, doubling, low-noise. For devices of special on
significances. - Feldtransistor 2PS104B
Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and
n-channel, doubling, low-noise. For devices of special
appointment. - Feldtransistor 2PS104D
Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and
n-channel, doubling, low-noise. For devices of special
appointment. - Feldtransistor 2PS104E
Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and
n-channel, doubling, low-noise. For devices of special
appointment. - Feldtransistor 2PS104G
Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and
n-channel, doubling, low-noise. For devices of special
appointment. - Feldtransistor 2PS104V
Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and
n-channel, doubling, low-noise. For devices of special
appointment. - Feldtransistor 2PS202A-1
Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - Feldtransistor 2PS202A1N
Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - Feldtransistor 2PS202B-1
Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - Feldtransistor 2PS202B1N
Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - Feldtransistor 2PS202G-1
Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - Feldtransistor 2PS202G1N
Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - Feldtransistor 2PS202V-1
Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - Feldtransistor 2PS202V1N
Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - Feldtransistor AP325A-2
The transistor low-noise is intended for microwave devices.
category temperature range from - 60 to +85*Ñ.
there may be the transistor delivery in the form of chip. - Feldtransistor AP326A-2
The transistor low-noise is intended for microwave devices.
category temperature range from - 60 to +85*Ñ.
there may be the transistor delivery in the form of chip. - Feldtransistor AP328A-2
The transistor low-noise dual-gate is intended for microwave devices.
category temperature range from - 60 to +85*Ñ. There may be the delivery òðàí-
çèñòîðà in the form of chip. Transistor analogue of NE463 (NEC). - Feldtransistor AP330A-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
analogue of òðàçèñòîðà (Toshiba). - Feldtransistor AP330B-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of JS8830AS (Toshiba). - Feldtransistor AP330V-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of NE673, JS830, FRH01FH (Fujitsu). - Feldtransistor AP330V1-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of NE673, JS830, FRH01FH (Fujitsu). - Feldtransistor AP330V2-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of FRH01FH (Fujitsu). - Feldtransistor AP330V3-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of FRH01FH (Fujitsu). - Feldtransistor AP331A-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of CFY-12. - Feldtransistor AP339A-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of NE388-06 (NEC). - Feldtransistor AP343A-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of CFY25-20, CFY25-17 (Siemens). - Feldtransistor AP343A1-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of CFY25-20, CFY25-17 (Siemens). - Feldtransistor AP343A2-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of MGF4310, MGF4415. - Feldtransistor AP343A3-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of MGF4310, MGF4415. - Feldtransistor AP344A-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of NE72089A, NE76184A (NEC). - Feldtransistor AP344A1-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of NE72089A, NE76184A (NEC). - Feldtransistor AP344A2-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of FSC 10, FHC30LG/FA (Fujitsu). - Feldtransistor AP344A3-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of FSC 10, FHC30LG/FA (Fujitsu). - Feldtransistor AP344A4-2
The transistor low-noise is intended for microwave devices. the range of working
temperatures from - 60 to +85*Ñ. Transistors analogue of FCS 10, FHC30LG/FA
(Fujitsu). There may be the transistor delivery in the form of chip. - Feldtransistor AP362A9
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. - Feldtransistor AP362B9
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. - Feldtransistor AP379A9
The transistor low-noise dual-gate is intended for microwave devices.
category temperature range from - 60 to +85*Ñ. There may be the delivery òðàí-
çèñòîðà in the form of chip. Transistor analogue of CF 739. - Feldtransistor AP379B9
The transistor low-noise dual-gate is intended for microwave devices.
category temperature range from - 60 to +85*Ñ. There may be the delivery òðàí-
çèñòîðà in the form of chip. Transistor analogue of CF 739. - Feldtransistor AP605A-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of DXL2608A (Dexcel). - Feldtransistor AP605A1-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of DXL2608A (Dexcel). - Feldtransistor AP605A2-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of DXL2608A (Dexcel). - Feldtransistor KP202D-1
Single siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal chassis earth with flexible leads.
for instrument of wide application. - Feldtransistor KP202E-1
Single siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal chassis earth with flexible leads.
for instrument of wide application. - Feldtransistor KPS104A
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of Dee
ôôåðåíöèàëüíûõ direct current amplifiers and low frequency. - Feldtransistor KPS104B
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential
ôåðåíöèàëüíûõ direct current amplifiers and low frequency. - Feldtransistor KPS104D
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential
ôåðåíöèàëüíûõ direct current amplifiers and low frequency. - Feldtransistor KPS104E
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential
ôåðåíöèàëüíûõ direct current amplifiers and low frequency. - Feldtransistor KPS104G
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential
ôåðåíöèàëüíûõ direct current amplifiers and low frequency. - Feldtransistor KPS104V
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential
ôåðåíöèàëüíûõ direct current amplifiers and low frequency. - Feldtransistor KPS202A-1
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal chassis earth with flexible leads.
for instrument of wide application. - Feldtransistor KPS202B-1
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal chassis earth with flexible leads.
for instrument of wide application. - Feldtransistor KPS202G-1
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal chassis earth with flexible leads.
for instrument of wide application. - Feldtransistor KPS202V-1
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal chassis earth with flexible leads.
for instrument of wide application.
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