Transistor field-effect

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  •   Parts and components for electronics
    • Transistor field-effect 2P202D-1
      Single naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà íàðíûé with pn-junction and n-channel, low-noise. For input casa BPO of integrated microcircuits, hermetization and protection.
    • Transistor field-effect 2P202D1N
      Single naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà íàðíûé with pn-junction and n-channel, low-noise. For input casa BPO of integrated microcircuits, hermetization and protection.
    • Transistor field-effect 2P202E-1
      Single naked siliceous ýïèòàêñèàëüíîïëàíàðíûé with p-n ïåðåõî house and n-channel, low-noise. For hybrid integrated circuits
    • Transistor field-effect 2P202E-1 (i-l)
      Single naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà íàðíûé with pn-junction and n-channel, low-noise. For input casa BPO of integrated microcircuits, hermetization and protection.
    • Transistor field-effect 2P202E1N
      Single naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà íàðíûé with pn-junction and n-channel, low-noise. For input casa BPO of integrated microcircuits, hermetization and protection.
    • Transistor field-effect 2PS104A
      Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and n-channel, doubling, low-noise. For devices of special on significances.
    • Transistor field-effect 2PS104B
      Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and n-channel, doubling, low-noise. For devices of special appointment.
    • Transistor field-effect 2PS104D
      Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and n-channel, doubling, low-noise. For devices of special appointment.
    • Transistor field-effect 2PS104E
      Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and n-channel, doubling, low-noise. For devices of special appointment.
    • Transistor field-effect 2PS104G
      Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and n-channel, doubling, low-noise. For devices of special appointment.
    • Transistor field-effect 2PS104V
      Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and n-channel, doubling, low-noise. For devices of special appointment.
    • Transistor field-effect 2PS202A-1
      Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà íàðíûé with pn-junction and n-channel, low-noise. For input casa BPO of integrated microcircuits, hermetization and protection.
    • Transistor field-effect 2PS202A1N
      Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà íàðíûé with pn-junction and n-channel, low-noise. For input casa BPO of integrated microcircuits, hermetization and protection.
    • Transistor field-effect 2PS202B-1
      Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà íàðíûé with pn-junction and n-channel, low-noise. For input casa BPO of integrated microcircuits, hermetization and protection.
    • Transistor field-effect 2PS202B1N
      Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà íàðíûé with pn-junction and n-channel, low-noise. For input casa BPO of integrated microcircuits, hermetization and protection.
    • Transistor field-effect 2PS202G-1
      Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà íàðíûé with pn-junction and n-channel, low-noise. For input casa BPO of integrated microcircuits, hermetization and protection.
    • Transistor field-effect 2PS202G1N
      Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà íàðíûé with pn-junction and n-channel, low-noise. For input casa BPO of integrated microcircuits, hermetization and protection.
    • Transistor field-effect 2PS202V-1
      Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà íàðíûé with pn-junction and n-channel, low-noise. For input casa BPO of integrated microcircuits, hermetization and protection.
    • Transistor field-effect 2PS202V1N
      Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà íàðíûé with pn-junction and n-channel, low-noise. For input casa BPO of integrated microcircuits, hermetization and protection.
    • Transistor field-effect AP325A-2
      The transistor low-noise is intended for microwave devices. category temperature range from - 60 to +85*Ñ. there may be the transistor delivery in the form of chip.
    • Transistor field-effect AP326A-2
      The transistor low-noise is intended for microwave devices. category temperature range from - 60 to +85*Ñ. there may be the transistor delivery in the form of chip.
    • Transistor field-effect AP328A-2
      The transistor low-noise dual-gate is intended for microwave devices. category temperature range from - 60 to +85*Ñ. There may be the delivery òðàí- çèñòîðà in the form of chip. Transistor analogue of NE463 (NEC).
    • Transistor field-effect AP330A-2
      The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. analogue of òðàçèñòîðà (Toshiba).
    • Transistor field-effect AP330B-2
      The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistor analogue of JS8830AS (Toshiba).
    • Transistor field-effect AP330V-2
      The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistors analogue of NE673, JS830, FRH01FH (Fujitsu).
    • Transistor field-effect AP330V1-2
      The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistors analogue of NE673, JS830, FRH01FH (Fujitsu).
    • Transistor field-effect AP330V2-2
      The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistor analogue of FRH01FH (Fujitsu).
    • Transistor field-effect AP330V3-2
      The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistor analogue of FRH01FH (Fujitsu).
    • Transistor field-effect AP331A-2
      The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistor analogue of CFY-12.
    • Transistor field-effect AP339A-2
      The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistor analogue of NE388-06 (NEC).
    • Transistor field-effect AP343A-2
      The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistors analogue of CFY25-20, CFY25-17 (Siemens).
    • Transistor field-effect AP343A1-2
      The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistors analogue of CFY25-20, CFY25-17 (Siemens).
    • Transistor field-effect AP343A2-2
      The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistors analogue of MGF4310, MGF4415.
    • Transistor field-effect AP343A3-2
      The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistors analogue of MGF4310, MGF4415.
    • Transistor field-effect AP344A-2
      The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistors analogue of NE72089A, NE76184A (NEC).
    • Transistor field-effect AP344A1-2
      The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistors analogue of NE72089A, NE76184A (NEC).
    • Transistor field-effect AP344A2-2
      The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistors analogue of FSC 10, FHC30LG/FA (Fujitsu).
    • Transistor field-effect AP344A3-2
      The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistors analogue of FSC 10, FHC30LG/FA (Fujitsu).
    • Transistor field-effect AP344A4-2
      The transistor low-noise is intended for microwave devices. the range of working temperatures from - 60 to +85*Ñ. Transistors analogue of FCS 10, FHC30LG/FA (Fujitsu). There may be the transistor delivery in the form of chip.
    • Transistor field-effect AP362A9
      The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
    • Transistor field-effect AP362B9
      The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
    • Transistor field-effect AP379A9
      The transistor low-noise dual-gate is intended for microwave devices. category temperature range from - 60 to +85*Ñ. There may be the delivery òðàí- çèñòîðà in the form of chip. Transistor analogue of CF 739.
    • Transistor field-effect AP379B9
      The transistor low-noise dual-gate is intended for microwave devices. category temperature range from - 60 to +85*Ñ. There may be the delivery òðàí- çèñòîðà in the form of chip. Transistor analogue of CF 739.
    • Transistor field-effect AP605A-2
      The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistor analogue of DXL2608A (Dexcel).
    • Transistor field-effect AP605A1-2
      The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistor analogue of DXL2608A (Dexcel).
    • Transistor field-effect AP605A2-2
      The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistor analogue of DXL2608A (Dexcel).
    • Transistor field-effect KP202D-1
      Single siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel n-type, low-noise, in glass-and-metal chassis earth with flexible leads. for instrument of wide application.
    • Transistor field-effect KP202E-1
      Single siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel n-type, low-noise, in glass-and-metal chassis earth with flexible leads. for instrument of wide application.
    • Transistor field-effect KPS104A
      Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of Dee ôôåðåíöèàëüíûõ direct current amplifiers and low frequency.
    • Transistor field-effect KPS104B
      Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential ôåðåíöèàëüíûõ direct current amplifiers and low frequency.
    • Transistor field-effect KPS104D
      Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential ôåðåíöèàëüíûõ direct current amplifiers and low frequency.
    • Transistor field-effect KPS104E
      Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential ôåðåíöèàëüíûõ direct current amplifiers and low frequency.
    • Transistor field-effect KPS104G
      Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential ôåðåíöèàëüíûõ direct current amplifiers and low frequency.
    • Transistor field-effect KPS104V
      Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential ôåðåíöèàëüíûõ direct current amplifiers and low frequency.
    • Transistor field-effect KPS202A-1
      Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel n-type, low-noise, in glass-and-metal chassis earth with flexible leads. for instrument of wide application.
    • Transistor field-effect KPS202B-1
      Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel n-type, low-noise, in glass-and-metal chassis earth with flexible leads. for instrument of wide application.
    • Transistor field-effect KPS202G-1
      Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel n-type, low-noise, in glass-and-metal chassis earth with flexible leads. for instrument of wide application.
    • Transistor field-effect KPS202V-1
      Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel n-type, low-noise, in glass-and-metal chassis earth with flexible leads. for instrument of wide application.

04-04-2025