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La description des produits / des services - Transistor à effet de champ,
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Entrez la rubrique et étudiez description détaillée des marques existantes et des modifications des produits / des services - Transistor à effet de champ.
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Les détails et les pièces pour la technique électronique
- Transistor à effet de champ 2P202D-1
Single naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - Transistor à effet de champ 2P202D1N
Single naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - Transistor à effet de champ 2P202E-1
Single naked siliceous ýïèòàêñèàëüíîïëàíàðíûé with p-n ïåðåõî
house and n-channel, low-noise. For hybrid integrated circuits - Transistor à effet de champ 2P202E-1 (i-l)
Single naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - Transistor à effet de champ 2P202E1N
Single naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - Transistor à effet de champ 2PS104A
Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and
n-channel, doubling, low-noise. For devices of special on
significances. - Transistor à effet de champ 2PS104B
Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and
n-channel, doubling, low-noise. For devices of special
appointment. - Transistor à effet de champ 2PS104D
Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and
n-channel, doubling, low-noise. For devices of special
appointment. - Transistor à effet de champ 2PS104E
Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and
n-channel, doubling, low-noise. For devices of special
appointment. - Transistor à effet de champ 2PS104G
Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and
n-channel, doubling, low-noise. For devices of special
appointment. - Transistor à effet de champ 2PS104V
Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and
n-channel, doubling, low-noise. For devices of special
appointment. - Transistor à effet de champ 2PS202A-1
Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - Transistor à effet de champ 2PS202A1N
Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - Transistor à effet de champ 2PS202B-1
Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - Transistor à effet de champ 2PS202B1N
Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - Transistor à effet de champ 2PS202G-1
Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - Transistor à effet de champ 2PS202G1N
Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - Transistor à effet de champ 2PS202V-1
Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - Transistor à effet de champ 2PS202V1N
Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - Transistor à effet de champ AP325A-2
The transistor low-noise is intended for microwave devices.
category temperature range from - 60 to +85*Ñ.
there may be the transistor delivery in the form of chip. - Transistor à effet de champ AP326A-2
The transistor low-noise is intended for microwave devices.
category temperature range from - 60 to +85*Ñ.
there may be the transistor delivery in the form of chip. - Transistor à effet de champ AP328A-2
The transistor low-noise dual-gate is intended for microwave devices.
category temperature range from - 60 to +85*Ñ. There may be the delivery òðàí-
çèñòîðà in the form of chip. Transistor analogue of NE463 (NEC). - Transistor à effet de champ AP330A-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
analogue of òðàçèñòîðà (Toshiba). - Transistor à effet de champ AP330B-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of JS8830AS (Toshiba). - Transistor à effet de champ AP330V-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of NE673, JS830, FRH01FH (Fujitsu). - Transistor à effet de champ AP330V1-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of NE673, JS830, FRH01FH (Fujitsu). - Transistor à effet de champ AP330V2-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of FRH01FH (Fujitsu). - Transistor à effet de champ AP330V3-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of FRH01FH (Fujitsu). - Transistor à effet de champ AP331A-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of CFY-12. - Transistor à effet de champ AP339A-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of NE388-06 (NEC). - Transistor à effet de champ AP343A-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of CFY25-20, CFY25-17 (Siemens). - Transistor à effet de champ AP343A1-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of CFY25-20, CFY25-17 (Siemens). - Transistor à effet de champ AP343A2-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of MGF4310, MGF4415. - Transistor à effet de champ AP343A3-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of MGF4310, MGF4415. - Transistor à effet de champ AP344A-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of NE72089A, NE76184A (NEC). - Transistor à effet de champ AP344A1-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of NE72089A, NE76184A (NEC). - Transistor à effet de champ AP344A2-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of FSC 10, FHC30LG/FA (Fujitsu). - Transistor à effet de champ AP344A3-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of FSC 10, FHC30LG/FA (Fujitsu). - Transistor à effet de champ AP344A4-2
The transistor low-noise is intended for microwave devices. the range of working
temperatures from - 60 to +85*Ñ. Transistors analogue of FCS 10, FHC30LG/FA
(Fujitsu). There may be the transistor delivery in the form of chip. - Transistor à effet de champ AP362A9
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. - Transistor à effet de champ AP362B9
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. - Transistor à effet de champ AP379A9
The transistor low-noise dual-gate is intended for microwave devices.
category temperature range from - 60 to +85*Ñ. There may be the delivery òðàí-
çèñòîðà in the form of chip. Transistor analogue of CF 739. - Transistor à effet de champ AP379B9
The transistor low-noise dual-gate is intended for microwave devices.
category temperature range from - 60 to +85*Ñ. There may be the delivery òðàí-
çèñòîðà in the form of chip. Transistor analogue of CF 739. - Transistor à effet de champ AP605A-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of DXL2608A (Dexcel). - Transistor à effet de champ AP605A1-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of DXL2608A (Dexcel). - Transistor à effet de champ AP605A2-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of DXL2608A (Dexcel). - Transistor à effet de champ KP202D-1
Single siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal chassis earth with flexible leads.
for instrument of wide application. - Transistor à effet de champ KP202E-1
Single siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal chassis earth with flexible leads.
for instrument of wide application. - Transistor à effet de champ KPS104A
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of Dee
ôôåðåíöèàëüíûõ direct current amplifiers and low frequency. - Transistor à effet de champ KPS104B
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential
ôåðåíöèàëüíûõ direct current amplifiers and low frequency. - Transistor à effet de champ KPS104D
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential
ôåðåíöèàëüíûõ direct current amplifiers and low frequency. - Transistor à effet de champ KPS104E
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential
ôåðåíöèàëüíûõ direct current amplifiers and low frequency. - Transistor à effet de champ KPS104G
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential
ôåðåíöèàëüíûõ direct current amplifiers and low frequency. - Transistor à effet de champ KPS104V
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential
ôåðåíöèàëüíûõ direct current amplifiers and low frequency. - Transistor à effet de champ KPS202A-1
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal chassis earth with flexible leads.
for instrument of wide application. - Transistor à effet de champ KPS202B-1
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal chassis earth with flexible leads.
for instrument of wide application. - Transistor à effet de champ KPS202G-1
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal chassis earth with flexible leads.
for instrument of wide application. - Transistor à effet de champ KPS202V-1
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal chassis earth with flexible leads.
for instrument of wide application.
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