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Descrizione di prodotto/servizio - transistor campale,
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Pezzi e componenti di macchine elettroniche
- transistor campale 2P202D-1
Single naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - transistor campale 2P202D1N
Single naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - transistor campale 2P202E-1
Single naked siliceous ýïèòàêñèàëüíîïëàíàðíûé with p-n ïåðåõî
house and n-channel, low-noise. For hybrid integrated circuits - transistor campale 2P202E-1 (i-l)
Single naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - transistor campale 2P202E1N
Single naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - transistor campale 2PS104A
Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and
n-channel, doubling, low-noise. For devices of special on
significances. - transistor campale 2PS104B
Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and
n-channel, doubling, low-noise. For devices of special
appointment. - transistor campale 2PS104D
Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and
n-channel, doubling, low-noise. For devices of special
appointment. - transistor campale 2PS104E
Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and
n-channel, doubling, low-noise. For devices of special
appointment. - transistor campale 2PS104G
Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and
n-channel, doubling, low-noise. For devices of special
appointment. - transistor campale 2PS104V
Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and
n-channel, doubling, low-noise. For devices of special
appointment. - transistor campale 2PS202A-1
Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - transistor campale 2PS202A1N
Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - transistor campale 2PS202B-1
Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - transistor campale 2PS202B1N
Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - transistor campale 2PS202G-1
Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - transistor campale 2PS202G1N
Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - transistor campale 2PS202V-1
Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - transistor campale 2PS202V1N
Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection. - transistor campale AP325A-2
The transistor low-noise is intended for microwave devices.
category temperature range from - 60 to +85*Ñ.
there may be the transistor delivery in the form of chip. - transistor campale AP326A-2
The transistor low-noise is intended for microwave devices.
category temperature range from - 60 to +85*Ñ.
there may be the transistor delivery in the form of chip. - transistor campale AP328A-2
The transistor low-noise dual-gate is intended for microwave devices.
category temperature range from - 60 to +85*Ñ. There may be the delivery òðàí-
çèñòîðà in the form of chip. Transistor analogue of NE463 (NEC). - transistor campale AP330A-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
analogue of òðàçèñòîðà (Toshiba). - transistor campale AP330B-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of JS8830AS (Toshiba). - transistor campale AP330V-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of NE673, JS830, FRH01FH (Fujitsu). - transistor campale AP330V1-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of NE673, JS830, FRH01FH (Fujitsu). - transistor campale AP330V2-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of FRH01FH (Fujitsu). - transistor campale AP330V3-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of FRH01FH (Fujitsu). - transistor campale AP331A-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of CFY-12. - transistor campale AP339A-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of NE388-06 (NEC). - transistor campale AP343A-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of CFY25-20, CFY25-17 (Siemens). - transistor campale AP343A1-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of CFY25-20, CFY25-17 (Siemens). - transistor campale AP343A2-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of MGF4310, MGF4415. - transistor campale AP343A3-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of MGF4310, MGF4415. - transistor campale AP344A-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of NE72089A, NE76184A (NEC). - transistor campale AP344A1-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of NE72089A, NE76184A (NEC). - transistor campale AP344A2-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of FSC 10, FHC30LG/FA (Fujitsu). - transistor campale AP344A3-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of FSC 10, FHC30LG/FA (Fujitsu). - transistor campale AP344A4-2
The transistor low-noise is intended for microwave devices. the range of working
temperatures from - 60 to +85*Ñ. Transistors analogue of FCS 10, FHC30LG/FA
(Fujitsu). There may be the transistor delivery in the form of chip. - transistor campale AP362A9
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. - transistor campale AP362B9
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. - transistor campale AP379A9
The transistor low-noise dual-gate is intended for microwave devices.
category temperature range from - 60 to +85*Ñ. There may be the delivery òðàí-
çèñòîðà in the form of chip. Transistor analogue of CF 739. - transistor campale AP379B9
The transistor low-noise dual-gate is intended for microwave devices.
category temperature range from - 60 to +85*Ñ. There may be the delivery òðàí-
çèñòîðà in the form of chip. Transistor analogue of CF 739. - transistor campale AP605A-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of DXL2608A (Dexcel). - transistor campale AP605A1-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of DXL2608A (Dexcel). - transistor campale AP605A2-2
The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of DXL2608A (Dexcel). - transistor campale KP202D-1
Single siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal chassis earth with flexible leads.
for instrument of wide application. - transistor campale KP202E-1
Single siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal chassis earth with flexible leads.
for instrument of wide application. - transistor campale KPS104A
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of Dee
ôôåðåíöèàëüíûõ direct current amplifiers and low frequency. - transistor campale KPS104B
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential
ôåðåíöèàëüíûõ direct current amplifiers and low frequency. - transistor campale KPS104D
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential
ôåðåíöèàëüíûõ direct current amplifiers and low frequency. - transistor campale KPS104E
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential
ôåðåíöèàëüíûõ direct current amplifiers and low frequency. - transistor campale KPS104G
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential
ôåðåíöèàëüíûõ direct current amplifiers and low frequency. - transistor campale KPS104V
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential
ôåðåíöèàëüíûõ direct current amplifiers and low frequency. - transistor campale KPS202A-1
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal chassis earth with flexible leads.
for instrument of wide application. - transistor campale KPS202B-1
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal chassis earth with flexible leads.
for instrument of wide application. - transistor campale KPS202G-1
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal chassis earth with flexible leads.
for instrument of wide application. - transistor campale KPS202V-1
Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal chassis earth with flexible leads.
for instrument of wide application.
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