Explanation/Annotation:Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential
ôåðåíöèàëüíûõ direct current amplifiers and low frequency.
Detailed model description:Initial drain current, mitotic activity 1. 1-3. 0
characteristic transconductance, ìÀ/Â, no less than 1. 0
gate leakage current, on, not more 1. 0
cut-off voltage (negative), in 0. 8-3. 0
defferense of gate source voltage, microwave, not more 50. 0
input capacitance, pension fund, not more 4. 5
feedthrough capacitance, pension fund, not more 1. 5
temperature maintenance of defferense of gate source voltage,
ìêÂ/ãðàä. With, not more 150. 0
swing of noise voltage, mk: V, not more 30. 0 |
