Explanation/Annotation:Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and
n-channel, doubling, low-noise. For devices of special
appointment.
Detailed model description:Initial drain current, mitotic activity 0. 35-1. 5
characteristic transconductance, ìÀ/Â, no less than 0. 65
cut-off voltage (negative), in, 0. 4-2. 0
noise voltage, mk: V, not more than 5. 0
input capacitance, pension fund, not more 4. 5
feedthrough capacitance, pension fund, not more 1. 5
gate leakage current, on, not more 1. 0
defferense of gate source voltage, microwave, not more 50. 0
drifting of characteristic transconductance, %, do not More than 20. 0
temperature maintenance of difference çàòâîð-èñòîê of ìêÂ/ãðàä. With,
not more 150. 0 |
