Explanation/Annotation:Digital. Ram (static). For meas.
ðèòåëüíûõ devices, communication systems, computer engineering, other lip
processing ðîéñòâ of digital information.
Detailed model description:The body 4112. 16-1
significance of principal parameters are given in ÍÊÓ in case of Uïèò. 10Â
low-level output voltage, in, not more 10. 0
high-level output voltage, in, no less than 9. 44
low-level input voltage, in, not more 2. 7
high-level input voltage, in, no less than 6. 3
functioning voltage, in, no less than 6. 0
not more 12. 0
leakage current of low and high levels at entry, mkA, not more 0. 05
low-level output current, mitotic activity, no less than 2. 0
the high-level output current, mitotic activity, no less than 0. 6
the consumption current in store mode, mkA, not more 200. 0
the output current of low and high levels are in a position
"is off", mkA, not more 1 . 5
the writing cycle time (the readings), the ground station, not more 1300. 0
the sampling time of permit, ground station, not more 1000. 0
the input capacitance, the pension fund, not more 10. 0
output capacitance , pension fund, not more 18. 0 |
