Schiaramento/annotazione:Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of Dee
ôôåðåíöèàëüíûõ direct current amplifiers and low frequency.
Descrizione del marchio dettagliata:Initial drain current, mitotic activity 0. 1-0. 8
characteristic transconductance, ìÀ/Â, no less than 0. 35
gate leakage current, on, not more 0. 3
cut-off voltage (negative), in 0. 2-1. 0
defferense of gate source voltage, microwave, not more 30. 0
input capacitance, pension fund, not more 4. 5
feedthrough capacitance, pension fund, not more 1. 5
temperature maintenance of defferense of gate source voltage,
ìêÂ/ãðàä. With, not more 50. 0
swing of noise voltage, mk: V, not more 2. 4 |
