Explanation/Annotation:Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection.
Detailed model description:The principal parameters are given in case of ÍÊÓ
the initial drain current, mitotic activity 1. 1-3. 0
the characteristic transconductance, ìÀ/Â, no less than 1. 0
the cut-off voltage, negative, in 0. 8-3. 0
the gate leakage current, on, not more 0. 3
the defferense of gate source voltage, microwave, not more 30. 0
E.. House S.. Noise, íÂ/êâ. | ÊîðåíüÃö, not more 20. 0
input capacitance, pension fund, not more 6. 0
feedthrough capacitance, pension fund, not more 2. 0
temperature maintenance of defferense of gate source voltage,
ìêÂ/ãðàä. With, not more than 100. 0 |
