Explanation/Annotation:Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal chassis earth with flexible leads.
for instrument of wide application.
Detailed model description:Initial drain current, mitotic activity 0. 25-1. 5
characteristic transconductance, ìÀ/Â, no less than 0. 5
cut-off voltage (negative), in 0 . 2-2. 0
gate leakage current, on, not more 0. 6
defferense of gate source voltage, microwave, not more 10. 0
input capacitance, pension fund, not more 6. 0
feedthrough capacitance, pension fund, not more 2. 0
temperature maintenance of defferense of gate source voltage,
ìêÂ/ãðàä. With, not more 40. 0
swing of noise voltage, mk: V, not more 12. 0 |
