Explanation/Annotation:Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and
n-channel, doubling, low-noise. For devices of special
appointment.
Detailed model description:Initial drain current, mitotic activity 1. 1-3. 0
characteristic transconductance, ìÀ/Â, no less than 1. 0
cut-off voltage (negative), in, 0. 8-3. 0
noise voltage, mk: V, not more 1. 0
swing of noise voltage, mk: V, not more 6. 0
input capacitance, pension fund, not more 4. 5
feedthrough capacitance, pension fund, not more 1. 5
gate leakage current, on, not more 1. 0
defferense of gate source voltage, microwave, do not More than 50. 0
drifting of characteristic transconductance, %, not more 20. 0
temperature maintenance of difference çàòâîð-èñòîê of ìêÂ/ãðàä. With,
not more than 100. 0 |
