Explanation/Annotation:Secondary waste of semiconductor manufacturing liberating of ãàëèÿ and
arsenic of various marks.
Detailed model description:1. Waste product of liquid phase epitaxy of structures, containing the solid solutions
on the basis of AsGa;
2. Waste product of processes of fusion and single crystal growth containing AsGa;
3. Waste product of liquid phase epitaxy of structures containing the solid solutions on
foundation of AsGa with phosphorus content not more 1. 5 %.
in case of processing of last two kinds of waste at the same time is being extracted
the arsenic of different separation efficiencies;
final processing products are:
1. Gallia technical not that are exposed processing and supplied order
÷èêó without additional purification;
2. Mark Gallia 4N with total content calibrated elements on
level 0. 01 % ;
3. Mark Gallia 6N with total content calibrated elements
not more 0. 0001 %;
4. Technical arsenic of not that are exposed processing after extraction and
supplied without additional purification;
5. Mark arsenic 4N and 6N.
the maximal volume taken in waste processing constitutes up to 1
0 tons per year.
cost of processing and the expenses coefficients are specified by the kind and
quality supplied raw material.
the technology allows to produce the efficient purification of Gallia in case of âûñ
îêîì content the Germany in source material. |
