2P202D-1
* 2P202D-1 | Single naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection.
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2P202D1N
* 2P202D1N | Single naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection.
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2P202E-1
* 2P202E-1 | Single naked siliceous ýïèòàêñèàëüíîïëàíàðíûé with p-n ïåðåõî
house and n-channel, low-noise. For hybrid integrated circuits
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2P202E-1 (i-l)
* 2P202E-1 (i-l) | Single naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection.
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2P202E1N
* 2P202E1N | Single naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection.
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2PS104A
* 2PS104A | Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and
n-channel, doubling, low-noise. For devices of special on
significances.
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2PS104B
* 2PS104B | Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and
n-channel, doubling, low-noise. For devices of special
appointment.
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2PS104V
* 2PS104V | Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and
n-channel, doubling, low-noise. For devices of special
appointment.
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2PS104G
* 2PS104G | Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and
n-channel, doubling, low-noise. For devices of special
appointment.
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2PS104D
* 2PS104D | Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and
n-channel, doubling, low-noise. For devices of special
appointment.
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2PS104E
* 2PS104E | Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and
n-channel, doubling, low-noise. For devices of special
appointment.
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2PS202A-1
* 2PS202A-1 | Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection.
|
2PS202A1N
* 2PS202A1N | Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection.
|
2PS202B-1
* 2PS202B-1 | Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection.
|
2PS202B1N
* 2PS202B1N | Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection.
|
2PS202V-1
* 2PS202V-1 | Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection.
|
2PS202V1N
* 2PS202V1N | Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection.
|
2PS202G-1
* 2PS202G-1 | Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection.
|
2PS202G1N
* 2PS202G1N | Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà
íàðíûé with pn-junction and n-channel, low-noise. For input casa
BPO of integrated microcircuits, hermetization and protection.
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AP325A-2
* AP325A-2 | The transistor low-noise is intended for microwave devices.
category temperature range from - 60 to +85*Ñ.
there may be the transistor delivery in the form of chip.
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AP326A-2
* AP326A-2 | The transistor low-noise is intended for microwave devices.
category temperature range from - 60 to +85*Ñ.
there may be the transistor delivery in the form of chip.
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AP328A-2
* AP328A-2 | The transistor low-noise dual-gate is intended for microwave devices.
category temperature range from - 60 to +85*Ñ. There may be the delivery òðàí-
çèñòîðà in the form of chip. Transistor analogue of NE463 (NEC).
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AP330A-2
* AP330A-2 | The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
analogue of òðàçèñòîðà (Toshiba).
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AP330B-2
* AP330B-2 | The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of JS8830AS (Toshiba).
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AP330V-2
* AP330V-2 | The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of NE673, JS830, FRH01FH (Fujitsu).
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AP330V1-2
* AP330V1-2 | The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of NE673, JS830, FRH01FH (Fujitsu).
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AP330V2-2
* AP330V2-2 | The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of FRH01FH (Fujitsu).
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AP330V3-2
* AP330V3-2 | The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of FRH01FH (Fujitsu).
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AP331A-2
* AP331A-2 | The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of CFY-12.
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AP339A-2
* AP339A-2 | The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of NE388-06 (NEC).
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AP343A-2
* AP343A-2 | The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of CFY25-20, CFY25-17 (Siemens).
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AP343A1-2
* AP343A1-2 | The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of CFY25-20, CFY25-17 (Siemens).
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AP343A2-2
* AP343A2-2 | The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of MGF4310, MGF4415.
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AP343A3-2
* AP343A3-2 | The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of MGF4310, MGF4415.
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AP344A-2
* AP344A-2 | The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of NE72089A, NE76184A (NEC).
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AP344A1-2
* AP344A1-2 | The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of NE72089A, NE76184A (NEC).
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AP344A2-2
* AP344A2-2 | The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of FSC 10, FHC30LG/FA (Fujitsu).
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AP344A3-2
* AP344A3-2 | The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistors analogue of FSC 10, FHC30LG/FA (Fujitsu).
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AP344A4-2
* AP344A4-2 | The transistor low-noise is intended for microwave devices. the range of working
temperatures from - 60 to +85*Ñ. Transistors analogue of FCS 10, FHC30LG/FA
(Fujitsu). There may be the transistor delivery in the form of chip.
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AP362A9
* AP362A9 | The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
|
AP362B9
* AP362B9 | The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
|
AP379A9
* AP379A9 | The transistor low-noise dual-gate is intended for microwave devices.
category temperature range from - 60 to +85*Ñ. There may be the delivery òðàí-
çèñòîðà in the form of chip. Transistor analogue of CF 739.
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AP379B9
* AP379B9 | The transistor low-noise dual-gate is intended for microwave devices.
category temperature range from - 60 to +85*Ñ. There may be the delivery òðàí-
çèñòîðà in the form of chip. Transistor analogue of CF 739.
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AP605A-2
* AP605A-2 | The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of DXL2608A (Dexcel).
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AP605A1-2
* AP605A1-2 | The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of DXL2608A (Dexcel).
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AP605A2-2
* AP605A2-2 | The transistor low-noise is intended for microwave devices. range of working
temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
transistor analogue of DXL2608A (Dexcel).
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KP202D-1
* KP202D-1 | Single siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal chassis earth with flexible leads.
for instrument of wide application.
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KP202E-1
* KP202E-1 | Single siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal chassis earth with flexible leads.
for instrument of wide application.
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KPS104A
* KPS104A | Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of Dee
ôôåðåíöèàëüíûõ direct current amplifiers and low frequency.
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KPS104B
* KPS104B | Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential
ôåðåíöèàëüíûõ direct current amplifiers and low frequency.
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KPS104V
* KPS104V | Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential
ôåðåíöèàëüíûõ direct current amplifiers and low frequency.
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KPS104G
* KPS104G | Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential
ôåðåíöèàëüíûõ direct current amplifiers and low frequency.
|
KPS104D
* KPS104D | Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential
ôåðåíöèàëüíûõ direct current amplifiers and low frequency.
|
KPS104E
* KPS104E | Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential
ôåðåíöèàëüíûõ direct current amplifiers and low frequency.
|
KPS202A-1
* KPS202A-1 | Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal chassis earth with flexible leads.
for instrument of wide application.
|
KPS202B-1
* KPS202B-1 | Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal chassis earth with flexible leads.
for instrument of wide application.
|
KPS202V-1
* KPS202V-1 | Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal chassis earth with flexible leads.
for instrument of wide application.
|
KPS202G-1
* KPS202G-1 | Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel
n-type, low-noise, in glass-and-metal chassis earth with flexible leads.
for instrument of wide application.
|