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Detalhas e componentos para artigos electrónicos

Transistor de campo

Escolha marca de produtos
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  • 2P202D-1

    *  2P202D-1
     
    		• Single naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà íàðíûé with pn-junction and n-channel, low-noise. For input casa BPO of integrated microcircuits, hermetization and protection.
  • 2P202D1N

    *  2P202D1N
     
    		• Single naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà íàðíûé with pn-junction and n-channel, low-noise. For input casa BPO of integrated microcircuits, hermetization and protection.
  • 2P202E-1

    *  2P202E-1
     
    		• Single naked siliceous ýïèòàêñèàëüíîïëàíàðíûé with p-n ïåðåõî house and n-channel, low-noise. For hybrid integrated circuits
  • 2P202E-1 (i-l)

    *  2P202E-1 (i-l)
     
    		• Single naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà íàðíûé with pn-junction and n-channel, low-noise. For input casa BPO of integrated microcircuits, hermetization and protection.
  • 2P202E1N

    *  2P202E1N
     
    		• Single naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà íàðíûé with pn-junction and n-channel, low-noise. For input casa BPO of integrated microcircuits, hermetization and protection.
  • 2PS104A

    *  2PS104A
     
    		• Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and n-channel, doubling, low-noise. For devices of special on significances.
  • 2PS104B

    *  2PS104B
     
    		• Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and n-channel, doubling, low-noise. For devices of special appointment.
  • 2PS104V

    *  2PS104V
     
    		• Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and n-channel, doubling, low-noise. For devices of special appointment.
  • 2PS104G

    *  2PS104G
     
    		• Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and n-channel, doubling, low-noise. For devices of special appointment.
  • 2PS104D

    *  2PS104D
     
    		• Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and n-channel, doubling, low-noise. For devices of special appointment.
  • 2PS104E

    *  2PS104E
     
    		• Siliceous èîíîëåãèðîâàííûé, ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and n-channel, doubling, low-noise. For devices of special appointment.
  • 2PS202A-1

    *  2PS202A-1
     
    		• Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà íàðíûé with pn-junction and n-channel, low-noise. For input casa BPO of integrated microcircuits, hermetization and protection.
  • 2PS202A1N

    *  2PS202A1N
     
    		• Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà íàðíûé with pn-junction and n-channel, low-noise. For input casa BPO of integrated microcircuits, hermetization and protection.
  • 2PS202B-1

    *  2PS202B-1
     
    		• Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà íàðíûé with pn-junction and n-channel, low-noise. For input casa BPO of integrated microcircuits, hermetization and protection.
  • 2PS202B1N

    *  2PS202B1N
     
    		• Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà íàðíûé with pn-junction and n-channel, low-noise. For input casa BPO of integrated microcircuits, hermetization and protection.
  • 2PS202V-1

    *  2PS202V-1
     
    		• Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà íàðíûé with pn-junction and n-channel, low-noise. For input casa BPO of integrated microcircuits, hermetization and protection.
  • 2PS202V1N

    *  2PS202V1N
     
    		• Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà íàðíûé with pn-junction and n-channel, low-noise. For input casa BPO of integrated microcircuits, hermetization and protection.
  • 2PS202G-1

    *  2PS202G-1
     
    		• Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà íàðíûé with pn-junction and n-channel, low-noise. For input casa BPO of integrated microcircuits, hermetization and protection.
  • 2PS202G1N

    *  2PS202G1N
     
    		• Doubling naked siliceous ion-implanted ýïèòàêñèàëüíî-ïëà íàðíûé with pn-junction and n-channel, low-noise. For input casa BPO of integrated microcircuits, hermetization and protection.
  • AP325A-2

    *  AP325A-2
     
    		• The transistor low-noise is intended for microwave devices. category temperature range from - 60 to +85*Ñ. there may be the transistor delivery in the form of chip.
  • AP326A-2

    *  AP326A-2
     
    		• The transistor low-noise is intended for microwave devices. category temperature range from - 60 to +85*Ñ. there may be the transistor delivery in the form of chip.
  • AP328A-2

    *  AP328A-2
     
    		• The transistor low-noise dual-gate is intended for microwave devices. category temperature range from - 60 to +85*Ñ. There may be the delivery òðàí- çèñòîðà in the form of chip. Transistor analogue of NE463 (NEC).
  • AP330A-2

    *  AP330A-2
     
    		• The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. analogue of òðàçèñòîðà (Toshiba).
  • AP330B-2

    *  AP330B-2
     
    		• The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistor analogue of JS8830AS (Toshiba).
  • AP330V-2

    *  AP330V-2
     
    		• The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistors analogue of NE673, JS830, FRH01FH (Fujitsu).
  • AP330V1-2

    *  AP330V1-2
     
    		• The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistors analogue of NE673, JS830, FRH01FH (Fujitsu).
  • AP330V2-2

    *  AP330V2-2
     
    		• The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistor analogue of FRH01FH (Fujitsu).
  • AP330V3-2

    *  AP330V3-2
     
    		• The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistor analogue of FRH01FH (Fujitsu).
  • AP331A-2

    *  AP331A-2
     
    		• The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistor analogue of CFY-12.
  • AP339A-2

    *  AP339A-2
     
    		• The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistor analogue of NE388-06 (NEC).
  • AP343A-2

    *  AP343A-2
     
    		• The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistors analogue of CFY25-20, CFY25-17 (Siemens).
  • AP343A1-2

    *  AP343A1-2
     
    		• The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistors analogue of CFY25-20, CFY25-17 (Siemens).
  • AP343A2-2

    *  AP343A2-2
     
    		• The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistors analogue of MGF4310, MGF4415.
  • AP343A3-2

    *  AP343A3-2
     
    		• The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistors analogue of MGF4310, MGF4415.
  • AP344A-2

    *  AP344A-2
     
    		• The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistors analogue of NE72089A, NE76184A (NEC).
  • AP344A1-2

    *  AP344A1-2
     
    		• The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistors analogue of NE72089A, NE76184A (NEC).
  • AP344A2-2

    *  AP344A2-2
     
    		• The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistors analogue of FSC 10, FHC30LG/FA (Fujitsu).
  • AP344A3-2

    *  AP344A3-2
     
    		• The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistors analogue of FSC 10, FHC30LG/FA (Fujitsu).
  • AP344A4-2

    *  AP344A4-2
     
    		• The transistor low-noise is intended for microwave devices. the range of working temperatures from - 60 to +85*Ñ. Transistors analogue of FCS 10, FHC30LG/FA (Fujitsu). There may be the transistor delivery in the form of chip.
  • AP362A9

    *  AP362A9
     
    		• The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
  • AP362B9

    *  AP362B9
     
    		• The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip.
  • AP379A9

    *  AP379A9
     
    		• The transistor low-noise dual-gate is intended for microwave devices. category temperature range from - 60 to +85*Ñ. There may be the delivery òðàí- çèñòîðà in the form of chip. Transistor analogue of CF 739.
  • AP379B9

    *  AP379B9
     
    		• The transistor low-noise dual-gate is intended for microwave devices. category temperature range from - 60 to +85*Ñ. There may be the delivery òðàí- çèñòîðà in the form of chip. Transistor analogue of CF 739.
  • AP605A-2

    *  AP605A-2
     
    		• The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistor analogue of DXL2608A (Dexcel).
  • AP605A1-2

    *  AP605A1-2
     
    		• The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistor analogue of DXL2608A (Dexcel).
  • AP605A2-2

    *  AP605A2-2
     
    		• The transistor low-noise is intended for microwave devices. range of working temperatures from - 60 to +85*Ñ. There may be the transistor delivery in the form of chip. transistor analogue of DXL2608A (Dexcel).
  • KP202D-1

    *  KP202D-1
     
    		• Single siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel n-type, low-noise, in glass-and-metal chassis earth with flexible leads. for instrument of wide application.
  • KP202E-1

    *  KP202E-1
     
    		• Single siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel n-type, low-noise, in glass-and-metal chassis earth with flexible leads. for instrument of wide application.
  • KPS104A

    *  KPS104A
     
    		• Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of Dee ôôåðåíöèàëüíûõ direct current amplifiers and low frequency.
  • KPS104B

    *  KPS104B
     
    		• Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential ôåðåíöèàëüíûõ direct current amplifiers and low frequency.
  • KPS104V

    *  KPS104V
     
    		• Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential ôåðåíöèàëüíûõ direct current amplifiers and low frequency.
  • KPS104G

    *  KPS104G
     
    		• Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential ôåðåíöèàëüíûõ direct current amplifiers and low frequency.
  • KPS104D

    *  KPS104D
     
    		• Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential ôåðåíöèàëüíûõ direct current amplifiers and low frequency.
  • KPS104E

    *  KPS104E
     
    		• Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel n-type, low-noise, in glass-and-metal enclosure. For cascade bxa of differential ôåðåíöèàëüíûõ direct current amplifiers and low frequency.
  • KPS202A-1

    *  KPS202A-1
     
    		• Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel n-type, low-noise, in glass-and-metal chassis earth with flexible leads. for instrument of wide application.
  • KPS202B-1

    *  KPS202B-1
     
    		• Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel n-type, low-noise, in glass-and-metal chassis earth with flexible leads. for instrument of wide application.
  • KPS202V-1

    *  KPS202V-1
     
    		• Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel n-type, low-noise, in glass-and-metal chassis earth with flexible leads. for instrument of wide application.
  • KPS202G-1

    *  KPS202G-1
     
    		• Doubling siliceous ýïèòàêñèàëüíî-ïëàíàðíûé with pn-junction and channel n-type, low-noise, in glass-and-metal chassis earth with flexible leads. for instrument of wide application.