Explicação, anotação:For proportional to transformation of force in electric signal.
The principle of operation is founded for the use of tensoeffect in semiconductors.
Descrição porminorizada da marca:Category temperature range, °Ñ - 50. 80
The tensotransducers upon fulfilments are broken into three group.
Ãðóïïà1: bridge resistance, lump 3, 25, - 0, 25
Power supply current, microampere 2
Initial unbalance, MV, - 15
Ãðóïïà2: bridge resistance, lump 4, 5, - 0, 35
Power supply current, microampere 1, 5
Initial unbalance, MV, - 15
Ãðóïïà12: bridge resistance, lump 4, - 1
Power supply current, microampere 1, 5
Initial unbalance, MV, - 25
Nonlinearity of output signal, % Uä, - 0, 2
Variation of output signal, % Uä, 1
Overall dimensions, mm, not more than ô20õ46 5
Housing protection of IP00 |
S05