FISinter (to initial point)
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Federative information system of producers on products and services
FISinter

Архив подсистемы «Информация производителей продукции»

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Planeta, AOOT
Planeta, AOOT

Russia, 173004, Novgorodskaya oblast, Novgorod, ul.Fedorovsky ruchey, 2/13
Phone(81622)3-19-12, 3-41-58
Fax31736ìàðêåòèíã, 33286ñáûò
Legal organizational formOC
foundation year 1958
Web address:
Federative Web-address:www.fisinter.org/117
E-mail: root@planeta.nov.su
ChiefZaricky G.V.

Scope of activity

Services telephones

 Bank particulars

 Additional information


Supplies:
         Parts and components for electronics   
         •   Transistor field-effect AP325A-2     AP325A-2
         •   Transistor field-effect AP326A-2     AP326A-2
         •   Transistor field-effect AP328A-2     AP328A-2
         •   Transistor field-effect AP330A-2     AP330A-2
         •   Transistor field-effect AP330B-2     AP330B-2
         •   Transistor field-effect AP330V-2     AP330V-2
         •   Transistor field-effect AP330V1-2     AP330V1-2
         •   Transistor field-effect AP330V2-2     AP330V2-2
         •   Transistor field-effect AP330V3-2     AP330V3-2
         •   Transistor field-effect AP331A-2     AP331A-2
         •   Transistor field-effect AP339A-2     AP339A-2
         •   Transistor field-effect AP343A-2     AP343A-2
         •   Transistor field-effect AP343A1-2     AP343A1-2
         •   Transistor field-effect AP343A2-2     AP343A2-2
         •   Transistor field-effect AP343A3-2     AP343A3-2
         •   Transistor field-effect AP344A-2     AP344A-2
         •   Transistor field-effect AP344A1-2     AP344A1-2
         •   Transistor field-effect AP344A2-2     AP344A2-2
         •   Transistor field-effect AP344A3-2     AP344A3-2
         •   Transistor field-effect AP344A4-2     AP344A4-2
         •   Transistor field-effect AP362A9     AP362A9
         •   Transistor field-effect AP362B9     AP362B9
         •   Transistor field-effect AP379A9     AP379A9
         •   Transistor field-effect AP379B9     AP379B9
         •   Transistor field-effect AP605A-2     AP605A-2
         •   Transistor field-effect AP605A1-2     AP605A1-2
         •   Transistor field-effect AP605A2-2     AP605A2-2
         •   Transistor silicon GT 346A     GT 346A
         •   Transistor silicon GT 346B     GT 346B
         •   Transistor silicon GT 346V     GT 346V
         •   Transistor silicon KT 209A     KT 209A
         •   Transistor silicon KT 209B     KT 209B
         •   Transistor silicon KT 209D     KT 209D
         •   Transistor silicon KT 209E     KT 209E
         •   Transistor silicon KT 209G     KT 209G
         •   Transistor silicon KT 209I     KT 209I
         •   Transistor silicon KT 209K     KT 209K
         •   Transistor silicon KT 209L     KT 209L
         •   Transistor silicon KT 209M     KT 209M
         •   Transistor silicon KT 209V     KT 209V
         •   Transistor silicon KT 209ZH     KT 209ZH
         •   Transistor silicon KT 3169A9, KT 3169A9-1     KT 3169A9, KT 3169A9-1

Data open till:31.12.2010

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